IRFH7110TR2PBF - MOSFET N CH 100V 11A PQFN5X6

Tillverkarens varunummer

IRFH7110TR2PBF

Intern artikelnummer

ABC-IRFH7110TR2PBF

Tillverkare

Infineon Technologies

Kort beskrivning

MOSFET N CH 100V 11A PQFN5X6

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

63648 Pieces

Referens pris

~~USD 0~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har IRFH7110TR2PBF i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för IRFH7110TR2PBF

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : IRFH7110TR2PBF

Tillverkare : Infineon Technologies

Beskrivning : MOSFET N CH 100V 11A PQFN5X6

Serier : HEXFET®

Delstatus : Obsolete

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 100V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 11A (Ta), 58A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 13.5 mOhm @ 35A, 10V

Vgs (th) (Max) @ Id : 4V @ 100µA

Gate Laddning (Qg) (Max) @ Vgs : 87nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 3240pF @ 25V

FET-funktionen : -

Effektdissipation (Max) : 3.6W (Ta), 104W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Surface Mount

Leverantörs Device Package : 8-PQFN (5x6)

Förpackning / fodral : 8-TQFN Exposed Pad

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : IRFH , IRFH711

dokument för IRFH7110TR2PBF

Datablad : IRFH7110TR2PBF.pdf

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