TSM60NB190CI C0G - MOSFET N-CH 600V 18A ITO220

Tillverkarens varunummer

TSM60NB190CI C0G

Intern artikelnummer

ABC-TSM60NB190CI C0G

Tillverkare

Taiwan Semiconductor Corporation

Kort beskrivning

MOSFET N-CH 600V 18A ITO220

RoHS-status

Blyfritt / RoHS

Leveranstid

1-2 dagar

tillgänglig kvantitet

229691 Pieces

Referens pris

~~USD 1.425~~

Vårt pris

- (Kontakta oss för ett bättre pris: [email protected])

ABC Semiconductor har TSM60NB190CI C0G i lager för att sälja.

Frakt alternativ och sändningstid:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Betalningsalternativ:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

specifikationer för TSM60NB190CI C0G

Kvalitetsgaranti : 365 dagar garanti

Stock Resource : Franchise Distributör / Tillverkare Direct

Ursprungsland : USA / TAIWAN / MEXICO / MALAYSIA / PHI

artikelnummer : TSM60NB190CI C0G

Tillverkare : Taiwan Semiconductor Corporation

Beskrivning : MOSFET N-CH 600V 18A ITO220

Serier : -

Delstatus : Active

FET-typ : N-Channel

Teknologi : MOSFET (Metal Oxide)

Avlopp till källspänning (Vdss) : 600V

Ström - Kontinuerlig avlopp (Id) @ 25 ° C : 18A (Tc)

Drivspänning (Max Rds På, Min Rds På) : 10V

Rds On (Max) @ Id, Vgs : 190 mOhm @ 6A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Gate Laddning (Qg) (Max) @ Vgs : 31nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 1273pF @ 100V

FET-funktionen : -

Effektdissipation (Max) : 33.8W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstyp : Through Hole

Leverantörs Device Package : ITO-220AB

Förpackning / fodral : TO-220-3 Full Pack, Isolated Tab

Vikt : -

Tillstånd : Nytt och originellt

relaterade länkar : TSM60 , TSM60NB1

dokument för TSM60NB190CI C0G

Datablad : TSM60NB190CI C0G.pdf

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